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Shikazono, Naoya; Suzuki, Chihiro*; Kitamura, Satoshi; Watanabe, Hiroshi*; Tano, Shigemitsu*; Tanaka, Atsushi
Journal of Experimental Botany, 56(412), p.587 - 596, 2005/02
Times Cited Count：117 Percentile：91.08(Plant Sciences)no abstracts in English
Lee, K. K.; Oshima, Takeshi; Saint, A.*; Kamiya, Tomihiro; Jamieson, D. N.*; Ito, Hisayoshi
Nuclear Instruments and Methods in Physics Research B, 210, p.489 - 494, 2003/09
Times Cited Count：21 Percentile：78.43(Instruments & Instrumentation)To obtain the information on radiation damage of 6H-SiC devices, ion beam induced charge collection (IBICC) for 6H-SiC schottky diodes irradiated with proton, alpha and carbon micro beam 10
to 10
ions/cm
was studied. No significant difference of degradation was observed between p- and n-substrates irradiated with 2MeV-alpha micro beam. The decrease in IBCC shows a good agreement with the calculation using non ionizing energy loss (NIEL). As a result of ion luminescence and ultra violet photo luminescence, the level of 2.32 eV was observed.
Shikazono, Naoya; Tanaka, Atsushi; Watanabe, Hiroshi; Tano, Shigemitsu
Genetics, 157(1), p.379 - 387, 2001/01
no abstracts in English
*; *; *; *; *; Kobayashi, Yasuhiko; Watanabe, Hiroshi; *; Akashi, Makoto*; *; et al.
J. Gen. Appl. Microbiol., 43, p.175 - 177, 1997/00
Times Cited Count：11 Percentile：37.63(Biotechnology & Applied Microbiology)no abstracts in English
Aruga, T.; Katano, Y.; Shiraishi, K.
Journal of Nuclear Materials, 122-123, p.191 - 195, 1984/00
no abstracts in English
Hamada, S.; ; Shiraishi, K.
Nihon Genshiryoku Gakkai-Shi, 26(8), p.695 - 697, 1984/00
Times Cited Count：0 Percentile：0.3(Nuclear Science & Technology)no abstracts in English
